| PART |
Description |
Maker |
| IRLML2803TRPBF |
Generation V Technology, Ultra Low On-Resistance
|
International Rectifier
|
| IRLML2803GPBF11 |
Generation V Technology, Ultra Low On-Resistance, N-Channel MOSFET
|
International Rectifier
|
| KRF7313 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
| KRF7301 |
Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
| IRF7403 IRF7403TRPBF |
Generation V Technology
Power MOSFET
|
IRF[International Rectifier]
|
| 8T49N012 |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
| IRF7343PBF IRF7343TRPBF |
generation v technology
HEXFET Power MOSFET
|
International Rectifier
|
| SGP10N60A SGW10N60A SGP10N60A09 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW15N120 SGP15N120 SGP15N12009 SGW15N120FKSA1 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
Infineon Technologies A...
|
| SGP02N60 SGP02N6007 SGD02N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| IRF7304TR |
Generation V Technology
-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| SGP20N60 SGP20N6009 SGW20N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
